Optimal inverter logic gate using 10-nm double gate-all-around (DGAA) transistor with asymmetric channel width
نویسندگان
چکیده
منابع مشابه
On Channel Shape Variation of 10-nm-Gate Gate-All-Around Silicon Nanowire MOSFETs
Recently, gate-all-around (GAA) nanowire field effect transistors (NWFETs) have attracted increasing attention due to their superior gate control and short channel effect immunity [1-4]. However, confined by the limitation of manufacturing process, the different aspect ratio (AR) results in different shapes of channel cross section, such as ellipse-shaped or rectangular-shaped instead of the id...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4940755